2N5401 PNP Transistor
R1.99
2N5401 general purpose high voltage and low power PNP silicon BJT.
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Description
The 2N5401 is a PNP transistor designed specifically for high voltage and low power switching applications and amplifications. Its NPN complementary device is the 2N5551 and is available in TO-92, SOT54.
Applications
- General purpose switching and amplification
- Telephony applications
- High voltage application
- Available in Pb−Free package
- High collector breakdown voltage
- With DC Current Gain (hFE) up to 100
- Maximum voltage across collector and emitter: 150V
- Maximum current allowed trough collector: 600mA
- Maximum voltage across collector and base: 160 V
- Maximum voltage across base and emitter: 5V
- Operating temperature range: -55ºC to +150ºC
- Maximum power dissipation : 0.62 W
Download Datasheet
Additional information
| Weight | 1 g |
|---|---|
| Brand | Generic |
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