2N5401 PNP Transistor

2N5401 PNP Transistor

R1.99

2N5401 general purpose high voltage and low power PNP silicon BJT.
Note: Specifications, Prices & Availability may change without notice. Images are for illustration purposes only. E&OE

Availability: 35 in stock SKU: STC-00506 Categories: , Tag:

Description

The 2N5401 is a PNP transistor designed specifically for high voltage and low power switching applications and amplifications. Its NPN complementary device is the 2N5551 and is available in TO-92, SOT54.

Applications

  • General purpose switching and amplification
  • Telephony applications
  • High voltage application
  • Available in Pb−Free package
  • High collector breakdown voltage
  • With  DC Current Gain (hFE) up to 100
  • Maximum voltage across collector and emitter: 150V
  • Maximum current allowed trough collector: 600mA
  • Maximum voltage across collector and base: 160 V
  • Maximum voltage across base and emitter: 5V
  • Operating temperature range: -55ºC to +150ºC
  • Maximum power dissipation : 0.62 W

Download Datasheet

Additional information

Weight1 g
Brand

Generic

Reviews

There are no reviews yet.


Be the first to review “2N5401 PNP Transistor”

You've just added this product to the cart:

Select your currency
EUREuro