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Description
Third generation Power MOSFETs provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because its isolated mounting hole.
It also provides greater creepage distances between pins to meet the requirements of most safety specifications.
This is an N-channel MOSFET rated voltage at 500V with 20A current.
Channel Type | N |
Maximum Continuous Drain Current | 20 A |
Maximum Drain Source Voltage | 500 V |
Package Type | TO-247AC |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 270 mΩ |
Channel Mode | Enhancement |
Maximum Power Dissipation | 280 W |
Maximum Gate Source Voltage | -20 V, +20 V |
Number of Elements per Chip | 1 |
Minimum Operating Temperature | -55 °C |
Width | 5.31mm |
Typical Gate Charge @ Vgs | 210 nC @ 10 V |
Maximum Operating Temperature | +150 °C |
Height | 20.7mm |
Length | 15.87mm |
Dimensions
Additional information
Weight | 3 g |
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Brand | Vishay |
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