- TECHNICAL DETAILS & TUTORIAL
- Additional information
- Reviews (0)
Third generation Power MOSFETs provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because its isolated mounting hole.
It also provides greater creepage distances between pins to meet the requirements of most safety specifications.
This is an N-channel MOSFET rated voltage at 500V with 20A current.
|Maximum Continuous Drain Current||20 A|
|Maximum Drain Source Voltage||500 V|
|Mounting Type||Through Hole|
|Maximum Drain Source Resistance||270 mΩ|
|Maximum Power Dissipation||280 W|
|Maximum Gate Source Voltage||-20 V, +20 V|
|Number of Elements per Chip||1|
|Minimum Operating Temperature||-55 °C|
|Typical Gate Charge @ Vgs||210 nC @ 10 V|
|Maximum Operating Temperature||+150 °C|